100µm to 1.0µm Pitch Finder Grids

1µm Pitch Silicon FINDER GRID

Features

  • 525µm ± 20µm thick Boron-doped ultra-flat silicon substrate with resistivity of 5-10ohm-cm and <100> orientation
  • Edge fiducial markers for grid position finding
  • Pitch of 1µm ± 0.025µm, 10µm ± 0.025µm and 100µm ± 0.25µm with perpendicularity better than 0.01º
  • Line width of 200nm ± 10nm for 1µm pitch lines, 300nm ± 15nm for 10µm pitch lines and 400nm ± 20nm for 100µm pitch lines
  • 300nm ± 30nm deep etched lines

Whole die layout

4x4 mm die with 3x3 mm usable area
4x4mm die with 3x3mm usable area

Close-up of major (1.0 and 0.5mm) and minor (0.1mm) fiducial marks

Close up of major (1.0 and 0.5 mm) and minor (0.1 mm) fiducial marks

Close-up of minor (100 and 10µm) fiducial marks

Close up of minor (100 and 10 µm) fiducial marks

Close-up of minor (10µm) fiducial marks and mesh with 1µm pitch

Close up of minor (10 µm) fiducial marks and mesh with 1 µm pitch

Enlarged view of mesh pattern

M1-and-M10-Calibration-Specimen-V1.0-January-2015_Page_07

10µm Pitch Silicon Calibration Specimen

Features

  • 525µm ± 20µm thick Boron-doped ultra-flat silicon substrate with resistivity of 5-10ohm-cm and <100> orientation
  • Edge fiducial markers for grid position finding
  • Pitch of 10µm ± 0.025µm and 100µm ± 0.25µm with perpendicularity better than 0.01º
  • Line width of 300nm ± 15nm for 10µm pitch lines and 400nm ± 20nm for 100µm pitch lines
  • 300nm ± 30nm deep etched lines

Whole die layout

4x4 mm die with 3x3 mm usable area
4x4mm die with 3x3mm usable area

Close-up of major (1.0 and 0.5mm) and minor (0.1mm) fiducial marks

M1 and M10 Calibration Specimen V1.0 January 2015_Page_10_Image_0001

Close-up of minor (100 and 10µm) fiducial marks

Close up of minor (100 and 10 µm) fiducial marks

Close-up of 10µm fiducial lines

Close up of 10 µm fiducial lines

Enlarged view of mesh pattern

Enlarged view of mesh pattern

 

Example SEM Image of 1 micrometer finder grid

Example SEM Image of 10 micrometer finder grid