Silicon Nitride Substrates

Available as 150mm and 100mm diameter Whole Silicon Nitride Wafers and as 5x5mm, 5x7mm, 10x10mm and 3.0mm diameter Silicon Nitride Diced Chips with thicknesses of ultra-low/low-stress silicon nitride to match the intended application

All products utilize Ultra-Flat Silicon Wafers with the following typical specifications:

Ultra-flat 6” wafers
Material: CZ Virgin Silicon Wafer
Grade: Prime
Diameter: 150mm
Orientation:
Type/Dopant: P/Boron
Resistivity: 10-20ohm-cm
Wafer Thickness: 675µm +/- 20µm
TTV: <=2µm
Site Flatness: <=1µm
Warp: <=30µm
Bow: <=20µm
Particles: <=30@>=0.2µm
Front Surface: Polished
Back Surface: Etched
Flat: 1 per SEMI Standard
Flat length 57.5mm +/- 2.5mm)

Ultra-flat 4” wafers
Material: CZ Virgin Silicon Wafer
Grade: Prime / CZ Virgin
Orientation: <100>
Diameter: 100mm
Type: P / Dopant: Boron
Resistivity: 10-20 Ohm-cm
Wafer Thickness: 525µm +/- 20µm
TTV: <= 4.00µm
Site Flatness: <=?µm
Warp: <=30µm
Bow: <=20µm
Particles: <=20@>=0.3µm
Front Surface: Polished
Back Surface: Etched
Flats: 2 per SEMI Standard
Primary flat length 32.5 ± 2.5mm, secondary flat 18.0 ± 2.0mm