Silicon Thermal Oxide Substrates

December 21, 2016 Dudley

Available as 150mm and 100mm diameter Whole Silicon Thermal Oxide Wafers and as 5x5mm, 5x7mm, 10x10mm and 3.0mm diameter Silicon Thermal Oxide Diced Chips, with thicknesses of thermal oxide to match the intended application

All products utilize Ultra-Flat Silicon Wafers with the following typical specifications:

Ultra-flat 6” wafers
Material: CZ Virgin Silicon Wafer
Grade: Prime
Diameter: 150mm
Orientation: <100>
Type/Dopant: P/Boron
Resistivity: 10-20ohm-cm
Thickness: 675µm +/- 20µm
TTV: <=2µm
Site Flatness: <=1µm
Warp: <=30µm
Bow: <=20µm
Particles: <=30@>=0.2µm
Front Surface: Polished
Back Surface: Etched
Flat: 1 per SEMI Standard
Flat length 57.5mm +/- 2.5mm

Ultra-flat 4” wafers
Material: CZ Virgin Silicon Wafer
Grade: Prime / CZ Virgin
Orientation: <100>
Diameter: 100mm
Type: P / Dopant: Boron
Resistivity: 10-20ohm-cm
Wafer Thickness: 525µm +/- 20µm
TTV: <= 4.00µm
Site Flatness: <=?um
Warp: <=30um
Bow: <=20µm
Particles: <=20@>=0.3µm
Front Surface: Polished
Back Surface: Etched
Flats: 2 per SEMI Standard
Primary flat length 32.5 ± 2.5mm, secondary flat 18.0 ± 2.0mm